FCP11N60F
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. This SUPERFET® FRFET® device offers a low 380mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 125W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 34ns turn-on delay and 56ns fall time.
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. This SUPERFET® FRFET® device offers a low 380mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 125W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 34ns turn-on delay and 56ns fall time.